Importance of spin-orbit interaction for the electron spin relaxation in organic semiconductors.
نویسندگان
چکیده
Despite the great interest organic spintronics has recently attracted, there is only a partial understanding of the fundamental physics behind electron spin relaxation in organic semiconductors. Mechanisms based on hyperfine interaction have been demonstrated, but the role of the spin-orbit interaction remains elusive. Here, we report muon spin spectroscopy and time-resolved photoluminescence measurements on two series of molecular semiconductors in which the strength of the spin-orbit interaction has been systematically modified with a targeted chemical substitution of different atoms at a particular molecular site. We find that the spin-orbit interaction is a significant source of electron spin relaxation in these materials.
منابع مشابه
Quantum Interference Control of Ballistic Magneto- resistance in a Magnetic Nanowire Containing Two Atomic- Size Domain Walls
The magnetoresistance of a one-dimensional electron gas in a metallic ferromagnetic nanowire containing two atomic-size domain walls has been investigated in the presence of spin-orbit interaction. The magnetoresistance is calculated in the ballistic regime, within the Landauer-Büttiker formalism. It has been demonstrated that the conductance of a magnetic nanowire with double domain walls...
متن کاملDistinguishing spin relaxation mechanisms in organic semiconductors.
A theory is introduced for spin relaxation and spin diffusion of hopping carriers in a disordered system. For disorder described by a distribution of waiting times between hops (e.g., from multiple traps, site-energy disorder, and/or positional disorder) the dominant spin relaxation mechanisms in organic semiconductors (hyperfine, hopping-induced spin-orbit, and intrasite spin relaxation) each ...
متن کاملDominant Spin Relaxation Mechanisms in Organic Semiconductor Alq3
Recent interest in the field of “spintronics” stems primarily from the desire to use the spin degree of freedom of a single electron, or a collection of electrons, to store, process, detect and communicate information. Digital information (in the form of binary bits 0 and 1) is encoded in the spin polarization of electron(s), then “processed” using spin-spin or spin-orbit interactions, subseque...
متن کاملANALYTICAL STUDY OF EFFECT OF BILAYER INORGANIC AND ORGANIC COATING AROUND THE IRON OXIDE NANOPARTICLES ON MAGNETIC RESONANCE IMAGING CONTRAST
Background & Aims: In recent years, iron oxide nanoparticles have been used in contrast-enhanced magnetic resonance imaging for diagnosing a wide range of diseases. In order to provide biocompatibility and prevent the toxicity of the nanoparticles, using organic or inorganic coating around these nanoparticles is important for their application. The aim of this study is to investigate the effect...
متن کاملادغام الگوی شبکه‌ای هولشتاین - کاندو برای توصیف نظریه ابررساناهای دمای بالا
It is a common knowledge that the formation of electron pairs is a necessary ingredient of any theoretical work describing superconductivity. Thus, finding the mechanism of the formation of the electron pairs is of utmost importance. There are some experiments on high transition temperature superconductors which support the electron-phonon (e-ph) interactions as the pairing mechanism (ARPES),...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- Physical review letters
دوره 110 21 شماره
صفحات -
تاریخ انتشار 2013